| 摘要 |
PURPOSE:To obtain an electrophotographic sensitive body improved in electrostatic chargeability characteristics and photosensitivity characteristics by specifying a photoconductive layer in the H content, the optical band gap, and its density. CONSTITUTION:A photoconductive layer contg. amorphous Si or Ge or the like is formed on a substrate made of a metal by glow discharge decomposition to give 20-30 atomic % H content of the photoconductive layer combined with Si and calculated from the IR absorption spectra, 1.5-1.85eV optical band gap, and 2.0g/cm<3> density. The electrophotographic sensitive body thus obtained is high in acceptance potential (surface potential at the time of corona charging), small in dark decay and deterioration of amorphous silicon hydride with the lapse of time, and especially good in photosensitivity in the longer wavelength side. |
