| 摘要 |
PURPOSE:To manufacture a highly integrated semiconductor device in less space of isolation region by a method wherein, after forming an oxidation resistant film on a semiconductor substrate, the oxidation in the first stage is performed using an organic base anisotropical oxidizing solution; the formed oxide film is removed; and another oxide film is formed by reoxidizing process. CONSTITUTION:An SiN film 2 which is an oxidation resistant oxide film formed on an Si substrate 1 is etched conforming to a pattern to make a partial opening. Next, an Si substrate 1 is oxidized to form an SiO2 film 4 using mixed solution of ethylene diamine, isopropyl alcohol and water (4:1:1) through the opening. The SiO2 film 4 is removed by etching process using fluoric acid base etchant since the film thickness thereof is almost doubled by the change from the Si substrate 1 to the SiO2 film 4. Then, another SiO2 film 4 is formed by thermal oxidation in the space from where the SiO2 film 4 is removed. Through these procedures, the space in an isolation region can be contracted to make a semiconductor device highly integrated.
|
