| 摘要 |
PURPOSE:To offer a semiconductor device of high electrostatic withstand voltage by checking destruction of junction due to dissolution of aluminum by a method wherein the distance from the exposing part of the interface of P-N junction up to the contact position of the aluminum electrode is so set as to make the withstand voltage characteristic of P-N junction in relation to the distance thereof is set to the value nearby the saturated condition. CONSTITUTION:On a semiconductor substrate 21 corresponding to a channel region between a source 23 and a drain 24, a gate electrode 26 is formed with a gate insulating film 25 between. A source electrode 27 and a drain electrode 28 are formed on the regions of a source 23 and a drain 24 respectively. At this case, the drain electrode 28 is made to come in contact with the drain 24 having the distance between the gate electrode 25, namely the distance between the exposing part of the interface of P-N junction of the drain electrode 24 and the substrate 21 is separated farther than the usually designed reference value. The distance thereof is decided on the withstand voltage characteristic of P-N junction in regard to the distance from the exposing part of the interface of P-N junction of the drain 24 and the substrate 21 up to the contact position of the drain electrode 28.
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