| 摘要 |
PURPOSE:To prevent the temperature rise of the substrate to be treated such as a semiconductor wafer by a method wherein the title electrode is provided with an electrode plate on which the substrate to be treated is retained, through the intermediary of an insulative layer covering the surface of the substrate to be treated and also high frequency electric power will be applied thereto, and the gas flow passage through which cooling gas will be supplied on the reverse side of said substrate to be treated, and the dielectric withstand voltage of the above-mentioned gas flow passage is made higher than the dielectric withstand voltage of said insulative layer. CONSTITUTION:The substrate to be treated such as a semiconductor wafer 14 is arranged on the surface of an insulative layer 12, high frequency power is applied across an electrode plate 11 and an opposing electrode or the like, the sputtering gas circulated in a treatment chamber is activated, and the surface of the wafer 14 is etched. At this time, the gas same as the sputtering gas circulated in the treatment chamber is supplied from a cooling gas feeding device 13 as cooling gas on the reverse side of the semiconductor wafer 14 using a gas flow passage 15. Accordingly, the semiconductor wafer 14 can be cooled with said gas. Also, by bringing the dielectric withstand voltage of the gas flow passage 15 higher than the dielectric withstand voltage of the insulative layer 12, the abnormal electric discharge by the self-biased voltage generating on the surface of the semiconductor wafer 14 can be prevented.
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