| 摘要 |
PURPOSE:To produce a waveform transmission device suitable for use with a signal transmission line in a semiconductor integrated circuit without using an inductor or non-linear capacitor by a method wherein a soliton exciter is provided at one end of a semiconductor region and a soliton detector is provided at the other end of the semiconductor. CONSTITUTION:On an insulating layer 104 provided on an n-region 102, a soliton exciting electrode (SE electrode) 105, soliton transmission control electrode (STC electrode) 106, and a soliton detecting electrode (SD electrode) 107 are built. The n-region 102 is completely depleted through contact with a p-substrate 101. A process follows wherein a positive DC bias voltage is applied to the STC electrode 106, which deepens the potential of the depletion region of the n-region 102. Then, a positive voltage is applied to the SG electrode 108, which causes electrons to travel from an n<+>-region 103 into the n-region 102. A process follows wherein the SG electrode 108 is freed of the positive voltage for the electrons to be entrapped in the n-region 102. Under the conditions, pulses are applied to the SE electrode 105, which results in the excitation of a solitary wave (soliton wave) in the electrons in the n-region 102 in the vicinity of the SE electrode 105. The soliton wave is transmitted to the opposite side with the passage of time.
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