| 摘要 |
PURPOSE:To enable prevention of lowering of adhesion strength, by a method wherein a first process wherein an intermediate layer is formed is carried out by a physical film forming method to eliminate the influence of a plating liquid state and impurity. CONSTITUTION:Through introduction of argon gas to the inside of a device, the degree of pressure reduction is adjusted to 5 X 10<-3> Torr, and through application of a high frequency power of approximate 3.56 MHz, argon plasma is generated. Spatter etching of an aluminum alloy layer 2 surface is carried out by means of a making power of 100W for 30 min. Nickel is placed on a target to apply a d.c. voltage of approximate 400V to generate argon plasma, and spattering is effected for 20 min. Thus, an intermediate layer 3 formed by nickel can be formed on an aluminum alloy layer 2 surface to cover the aluminum alloy layer therewith, and the intermediate layer 3 is formed by a physical film forming method. This constitution eliminates the influence of a plating liquid state and impurity, and enables prevention of lowering of adhe sion strength.
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