| 摘要 |
PURPOSE:To increase the maximum light output without saturation in current- optical output characteristics in a buried structure semiconductor laser surrounded by an active layer with a semiconductor layer having large forbidden band width by providing the first electrode formed on a region corresponding to direct above the active layer and the second electrode disposed at the isolated position. CONSTITUTION:A positive voltage is applied to a terminal 12 to implant a current i1 to an active layer 3, a voltage which is lower than the terminal 12 is applied to a terminal 14, and a current i2 is flowed from a P type electrode 10 to a P type electrode 11. The voltage which is applied to an InP homojunction 8 is highest in the vicinity of the layer 3 and becomes lower at the position farther than the active layer due to the voltage drop. Since only the voltage that is lower than the voltage which is applied to the layer 3 is always applied to the InP homojunction 8, the reactive current which flows through the junction 8 can be almost ignored and the current i1 can be almost implanted to the layer 3, a buried structure semiconductor laser which has large maximum output can be manufactured. |
