| 发明名称 |
Memory cell having hot-hole injection erase mode |
| 摘要 |
A single component electrically erasable memory cell is disclosed. A floating gate MOSFET having a relatively short channel is triggered into a snap-back mode positive feedback biasing mechanism. Hot-hole injection onto the floating gate during the snap-back mode neutralizes any charge stored there to represent a data bit.
|
| 申请公布号 |
US4742491(A) |
申请公布日期 |
1988.05.03 |
| 申请号 |
US19850780482 |
申请日期 |
1985.09.26 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LIANG, MONG-SONG;LEE, TIEN-CHIUN |
| 分类号 |
G11C17/00;G11C16/04;G11C16/06;G11C16/14;G11C16/16;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C7/00 |
主分类号 |
G11C17/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
