| 摘要 |
PURPOSE:To mass-produce the title deposited film with high productivity without utilizing a plasma reaction by introducing a precursor for the deposited film and an active species into a reaction space, and allowing both materials to react with each other at the time of forming the deposited film of amorphous Si, etc., on a substrate in a vacuum vessel. CONSTITUTION:The substrate 15 made of an electrically conductive material such as metal or an insulating material such as synthetic resin is placed in the vacuum deposition space 1, and heated by a heater 12 to 300 deg.C. A decomposition space 2 packed with a solid Si species 5 is heated to 1,100 deg.C by an electric furnace 4, and the raw precursor material 6 such as SiF4 and SiHF2 is supplied and allowed to react with the species to form SiF2 as the precursor which is supplied into the deposition space 1 from an inlet pipe 7 and injected from blow-off holes 13. Meanwhile, a decomposition space 3 is heated to 600 deg.C by an electric furnace 8, and the raw material 9 for the active species such as H2, He, Ar, and SiH4 is supplied into the space to form the active species of SiH2, SiH, etc., which are injected into the deposition space 1 from a blow-off pipe 14. As a result, a photo-conductive material 100 consisting of the substrate 15 as a carrier 101, an intermediate layer 102, a photo-conductive layer 103 of amorphous Si having 1-100mum thickness, and a surface layer 104 is mass-produced without utilizing a plasma reaction.
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