| 摘要 |
PURPOSE:To obtain sufficient flatness having no irregularity and dry spot, to apply the title method enough even to a semiconductor having fine structure and to inhibit the generation of a defect by further treating the surface flattened through etching thermally and flattening the surface. CONSTITUTION:An insulating film 4, which can be fluidized through heat treatment, is shaped onto a polysilicon gate electrode 2 formed onto a substrate 1, a polysilicon wiring layer 3, etc. A mask layer 5 is shaped, the whole surfaceof the layer 5 is etched, the mask layer 5 is removed while the surface is flattened, and the insulating film 4 is thermally treated, thus acquiring a flat surface shape. Even when there are irregularities in the formed insulating film 4, the approximately flat surface form is obtained through the formation of the next layer 5 and the etching of the whole surface. Accordingly, even when a craterform dry spot remains in the surface, the insulating film 4 is thermally treated, thus reflowing the film 4 at that time, then acquiring the sufficiently flattened surface shape. |
