发明名称 Precharge of a dram data line to an intermediate voltage
摘要 A dynamic random access memory has data line pair which receives data from a selected pair of bit lines. Coupled to the data line pair is a secondary amplifier for amplifying the data provided to the data line pair from the bit line pair. The secondary amplifier has a maximum gain when the inputs are at a voltage intermediate a power supply voltage. Prior to the pair of bit lines being coupled to the data line pair, the data lines are biased to the intermediate voltage which is in the range of maximum gain of the secondary amplifier so that the secondary amplifier will operate at maximum gain which results in increased speed of operation of the dynamic random access memory.
申请公布号 US4740921(A) 申请公布日期 1988.04.26
申请号 US19850784450 申请日期 1985.10.04
申请人 MOTOROLA, INC. 发明人 LEWANDOWSKI, ALAN;PELLEY, III, PERRY H.
分类号 G11C11/409;G11C11/4094;G11C11/4096;(IPC1-7):G11C11/34;G11C11/40 主分类号 G11C11/409
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