| 摘要 |
PURPOSE:To decrease the number of steps, and to relax the conditions of preparation while increasing density by previously forming an element isolation insulating layer onto an Si substrate, growing a single crystal layer only onto the Si substrate except the insulating layer and shaping a bipolar TR and a complementary type MOS field-effect type TR onto the single crystal Si layer. CONSTITUTION:An inter-element isolation insulating layer 2 is formed previously onto a p-type Si substrate 1, and n<+> layers 3 and a p<+> layer 4 are formed. The surface of the p<+> layer 4 is coated with a thin insulating film 6, epitaxial Si layers are deposited only on the n<+> layers 3, and n-wells 5 are formed in a self-alignment manner. The insulating film 6 is removed, and a p-well 7 is shaped onto the p<+> layer 4 in the self-alignment manner through the same treatment as mentioned above. Insulating films 8 are removed, and a gate oxide film in a MOS field-effect type TR is formed and brought to desired impurity concentration. A gate electrode 9, a p<+> layer diffusion layer 11 and an n<+> layer diffusion layer 10 are shaped. Regions as a collector 12 and a base 13 in a bipolar TR are formed, a layer insulating film 15 is shaped, and an emitter 14 is formed. A contact hole is shaped, and a wiring 16 is conducted, thus completing a BICMOSTR. |
