| 摘要 |
<p>PURPOSE:To improve the reliability of a transistor by a method wherein a metal film is provided to the sealing part of an outer covering cap for sealing a transistor for soldering it with a substrate and airtightness of the sealing of outer covering of the transistor improved. CONSTITUTION:A transistor is airtightly sealed by an outer covering cap 9 for sealing. At that time, a metal film 12 for soldering the outer covering cap 9 for sealing of the transistor with a substrate 3 is provided on the sealing part of the cap 9. Whereupon, as the outer covering cap 9 for sealing is soldered with the substrate 3 using the metal film 12, the airtightness of the sealing of outer covering of the transistor is improved. Thereby, the reliability of the transistor is enhanced.</p> |
