| 摘要 |
PURPOSE:To reduce the dispersion of the crystal grain size of a CdTe film, and to improve photoelectric characteristics by also forming the CdTe film to the periphery of a photovoltaic element at the same time as the formation of the CdTe film in the photovoltaic element. CONSTITUTION:A CdS sintered film 2 is shaped onto a glass substrate 1, and a CdTe sintered film 3 is formed onto the film 2. The CdTe film in width Wmm(W>=3) is shaped separated by Dmm (D<=3) from the periphery of a photosensor at the same time as the formation of the CdTe film for the photosensor at that time. Consequently, the evaporation rate of flux CdCl2 and Cd and Te in the peripheral section of the CdTe film for the photosensor decreases on sintering. Accordingly, the crystal grain size of the peripheral section of the CdTe sintered film is increased, and difference with the crystal grain size of a central section is diminished, thus improving photoelectric characteristics. A carbon film 4 and an electrode are shaped, thus manufacturing the photosensor. |
