| 摘要 |
The device operates within a band of given wavelengths, and comprises, on the one hand, formed in succession on the surface of a semiconductor substrate S of a III-V compound, a confinement layer C0 made of a III-V compound and a layer C1 which is transparent for the operating wavelengths and which is made of a III-V compound of index greater than that of the confinement layer, the optical waveguide G1 being formed in the layer C1, and comprises, on the other hand, a layer C3 which is absorbing for the operating wavelengths and which is made of a III-V compound of index greater than that of the guide, the photodetector D being formed in the layer C3, characterised in that the absorbing layer C3 is formed on the surface of the transparent layer C1 in such a manner that the photodetector is formed at the surface of the optical waveguide G1 and coupled to the latter parallel to its axis over a given length L2 which is referred to as the coupling length, of which the quantity of light emanating from the guide and collected by the photodetector is a function. This device may likewise be characterised in that it comprises, formed between the transparent layer C1, which is then referred to as the first transparent layer, and the absorbing layer C3, a so-called second layer C2 which is transparent for the operating wavelengths and which is made of a III-V compound of index included between that of the first transparent layer C1 and that of the absorbing layer C3, in which second transparent layer C2 there is formed a second optical waveguide G2 referred to as the intermediate guide, formed at the surface of the guide formed in the first transparent layer C1, which guide is then referred to as the main guide G1, and coupled to the latter parallel to its axis over a length L1 referred to as the coupling length, of which the quantity of light emanating from the main guide G1 and collected by the intermediate guide G2 is a function. Application: electrooptical detector and processing of a signal. …<IMAGE>… |
