发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To improve dry-etching resistance of the titled composition by incorporating the trimethylsilyl ether compd. of a polycondensate of polyhydroxy phenol and ketone or aldehyde, and a o-quinone diazide compd. to the titled composition. CONSTITUTION:The titled composition comprises the tri-methylsilyl ether compd. of the polycondensate of polyhydroxy phenol and ketone or aldehyde, and the o-quinone diazide compd. The polyhydroxy phenol is exemplified by resorcin, pyrogallol, phloroglucin and catechol, etc. The ketone or aldehyde is exemplified by acetone, formaldehyde, acetoaldehyde and benzaldehyde, etc. The o-quinone diazide compd. is exemplified by the condensate of a novolak resin and o- quinone diazido sulfonyl chloride, and the condensate of a various phenol compd. and o-quinone diazidosulfonyl chloride. Thus, the titled composition having high sensitivity, high resolution and excellent resistance against dryetching at oxygen gas atmosphere is obtd.
申请公布号 JPS6388545(A) 申请公布日期 1988.04.19
申请号 JP19860233198 申请日期 1986.10.02
申请人 KANTO KAGAKU KK 发明人 KATSURAGI HAYATO;ISHIKAWA NORIO;MORI KIYOTO
分类号 C08L61/14;C08K5/22;C08L61/04;G03C1/00;G03C1/72;G03F7/075 主分类号 C08L61/14
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