发明名称 Antireflection film
摘要 An antireflection film composed of a layer of arsenic triselenide having an optical thickness in the range between 2.518 and 2.783 mu m, a layer of potassium chloride having an optical thickness in the range between 1.151 and 1.272 mu m and a layer of arsenic triselenide having an optical thickness in the range between 0.577 and 0.749 mu m which are successively formed on a member of infrared radiation transmitting material formed of a mixture of thalium iodide and thalium bromide. The member provided with the three-layer antireflection film is used in an atmosphere of protective gas, such as dry air or dry N2 gas.
申请公布号 US4738497(A) 申请公布日期 1988.04.19
申请号 US19850783090 申请日期 1985.10.02
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MIYATA, TAKEO;ONO, TAKUHIRO;IWABUCHI, TAKASHI;IKEDO, MASARU;WATARI, MASAFUMI
分类号 G02B1/11;G02B6/10;G02B6/24;G02B6/34;G02B13/14;(IPC1-7):G02B5/28 主分类号 G02B1/11
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