| 摘要 |
PURPOSE:To reduce variance of characteristics due to manufacturing conditions by using a heterojunction superlattice structure obtained by laminating thin semiconductor layers different in optical band gap from each other for a photosensitive body. CONSTITUTION:A photoconductive layer is composed essentially of Si containing C and constituted by laminating >=2 kinds of semiconductor layers different in the optical band gap from each other and each having a layer thickness of 3-20nm. As the semiconductor layers constituting heterojunction superlattice, microcrystalline (Si muc-Si) different in crystallinity from each other and continuously changing in crystallinity near each interface between each adjacent couple of the semiconductor layers, thus permitting the obtained electrophotographic sensitive body to generate carriers each long in life and high in mobility in the region of the photoconductive layer provided with the superlattices, and consequently, to be extremely enhanced in sensitivity. |
