FORMATION OF PATTERN

摘要

PURPOSE:To enable simply reducing the fog effect of an electron by making exposure uniform by irradiating ultraviolet rays on a resist film through a mask for correction after exposed in an electron beam. CONSTITUTION:The exposure of a main pattern 11 by the scanning of an electron ray is the greatest at the center and the smallest at the periphery. A correction pattern 15b is so formed that the thickness of a chromium thin film is denser at the center and that it is inversely proportional to the exposure of a resist film by the fog effect of the electron ray. A motor 34 controlled by a controller 24 is provided in a frame 33 and a chuck 30 is vertically moved by driving the motor 34. A plate 16 to be processed is installed on the chuck 30 and a mask 15 for correcting the exposure is attached on a mask holder 28 which is adjusted the vertical movement by an elevator 25 controlled by a vertical movement controller 21. A mercury lamp 26 connected to a power source 22 is provided above the mask 15 for correction and ultraviolet rays are irradiated.