| 摘要 |
PURPOSE:To provide a positive type resist compsn. high in sensitivity to ionizing radiation and superior in dry etching resistance by using a mixture of a resin contg. aromatic rings each having a free hydroxyl group and an ester of this resin and aromatic sulfonic acid. CONSTITUTION:A mixture of a resin A contg. aromatic rings each having a free hydroxyl group and an ester C of this resin A and aromatic sulfonic acid B is used for a positive type resist compsn. sensitive to ionizing radiation. A desirable weight ratio of the ester C to the resin A is (1-50):1. The resin A can be selected from various kinds of novolak resins and polyvinylphenol resins. The acid B can be selected from sulfonic acids of naphthalene, benzene, nitrobenzene, halogenated benzene, etc. |
