| 摘要 |
PURPOSE:To obtain a signal-processing circuit built-in photodetector capable of processing a signal at high speed by integrally forming a P-I-N photodiode at high speed and a signal processing circuit onto the same semiconductor substrate. CONSTITUTION:A P-I-N photodiode 2a at high speed and a signal processing circuit section 2b processing an output signal from the P-I-N photodiode 2a are shaped integrally onto an silicon substrate 11, thus realizing a photodetector in one chip. The photodiode 2a converts an information signal using light as a medium into an electric signal at high speed and outputs it. Accordingly, the signal-processing circuit built-in photodetector capable of processing the signal at high speed is acquired. |
