| 摘要 |
A gate turn-off thyristor has an anode short-circuiting structure which comprises a charge-carrier capture region which is constructed in an N-type base (bottom) layer in the vicinity of a main junction which is constructed between a P-type base layer and an N-type base layer. The result is a high-voltage component which offers a shortened turn-off time and yet a reduced forward voltage. <IMAGE>
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