| 摘要 |
PURPOSE:To enable reduction of recombination in an n-type AlGaAs layer, and to obtain a bipolar device having favorable current injection efficiency by a method wherein Sn is used as n-type impurity for the n-type AlGaAs layer. CONSTITUTION:An n-type AlGaAs layer (added with Sn) 12, a p-type GaAs layer 13, a p-type AlGaAs layer 14 and a p-type GaAs layer 15 are laminated in order on an n-type (100) GaAs substrate 11 to construct hetero junction. The GaAs layer 13 is the light emitting region. An Au/AuZn electrode 16 is formed coming in contact ohmically with the surface of the p-type GaAs layer 15, and an Au/AuGe electrode 17 is formed coming in contact ohmically with the n-type GaAs substrate 11. Because Sn is used as n-type impurity for the n-type AlGaAs layer 12, non-radiative recombination is scarcely generated to the layer thereof. It is caused depending upon the fact that the lattice mitigation PV of DX center of a donor level formed in the AlGaAs layer by Sn is smaller by far than the lattice mitigation of DX center to be formed by other n-type impurity. |
