发明名称 |
Wide area source of multiply ionized atomic or molecular species |
摘要 |
Apparatus for generating multiply charged ions from a source of wide area for use in ion implantation is based upon electron beam plasma interactions which more efficiently create a large density of multiply ionized species than conventional plasma sources over a wide area (1-20 cm in diameter). The beam electrons are generated from a glow discharge electron gun operating in the abnormal glow discharge state. More multiply ionized species are created because of the larger number of electrons at high energy present in a beam created discharge as compared to conventional hollow cathode or thermionic cathode ion sources. By using a ring-shaped cold cathode beam electron generator it is possible to realize a wide area source 2-20 cm in diameter. This multiple ion source permits the realization of a fixed ion implantation energy using a lower electrostatic potential because multiply ionized species are accelerated rather than singly ionized species.
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申请公布号 |
US4737688(A) |
申请公布日期 |
1988.04.12 |
申请号 |
US19860888501 |
申请日期 |
1986.07.22 |
申请人 |
APPLIED ELECTRON CORPORATION |
发明人 |
COLLINS, GEORGE J.;YU, ZENG-GI |
分类号 |
H01J27/02;H01J27/08;H01J37/08;(IPC1-7):H05H1/02;H05H1/03 |
主分类号 |
H01J27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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