发明名称 Wide area source of multiply ionized atomic or molecular species
摘要 Apparatus for generating multiply charged ions from a source of wide area for use in ion implantation is based upon electron beam plasma interactions which more efficiently create a large density of multiply ionized species than conventional plasma sources over a wide area (1-20 cm in diameter). The beam electrons are generated from a glow discharge electron gun operating in the abnormal glow discharge state. More multiply ionized species are created because of the larger number of electrons at high energy present in a beam created discharge as compared to conventional hollow cathode or thermionic cathode ion sources. By using a ring-shaped cold cathode beam electron generator it is possible to realize a wide area source 2-20 cm in diameter. This multiple ion source permits the realization of a fixed ion implantation energy using a lower electrostatic potential because multiply ionized species are accelerated rather than singly ionized species.
申请公布号 US4737688(A) 申请公布日期 1988.04.12
申请号 US19860888501 申请日期 1986.07.22
申请人 APPLIED ELECTRON CORPORATION 发明人 COLLINS, GEORGE J.;YU, ZENG-GI
分类号 H01J27/02;H01J27/08;H01J37/08;(IPC1-7):H05H1/02;H05H1/03 主分类号 H01J27/02
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