| 摘要 |
PURPOSE:To modulate the output of emitted light, by applying a specified amount of bias to a means, which excites second semiconductor layers having a large forbidden band width that hold a first semiconductor layer having a small forbidden band width, and changing only a voltage, which is applied on semiconductor multilayer films. CONSTITUTION:When a current is applied between an AuGeNi/Au electrode 15 and a Cr/Au electrode 16, light is emitted from a Ga1-yAlyAs layer 10. The emitted light is absorbed in Ga1-uAluAs layer 2. When a voltage is not applied across the AuGeNi/Au electrodes 14 and 15, electrons, which are produced by the absorption of the light, are recombined in the layers 2 in a non-light emitting mode. When the voltage is applied, carriers drop into GaAs layers 1 and the light is emitted. The light is made to radiate to the outside from the upper surface of the element. Thus the output of the light can be modulated by modulating the voltage, which is applied across the electrodes 14 and 15. |
