| 摘要 |
The invention relates to a read device for a ferroelectric memory storing information in the form of a series of domains 9 the polarisation direction of which is perpendicular to the plane of the layer 10 of ferroelectric material. One illustrative embodiment includes: two electrodes 12, 13, a transformer 14 and an oscillator 15 at frequency f, for applying an alternating electric field parallel to the plane of the layer 10, through the domain in question; an electrode 11, an amplifier 17 which is selective at the frequency 2f, a frequency doubler 16 and a synchronous detector 18 for detecting a component of frequency 2f in variations in the polarisation of the domain in question, this component being created by the excitation at the frequency f, and for comparing the phase of this component with the phase of the excitation electric field and for deducing therefrom the value of the binary information carried by the domain 9 in question. Application to reading all ferroelectric memories. <IMAGE>
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