发明名称 METHOD FOR FORMING DEPOSITED FILM
摘要 A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (B) for formation of a band gap controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a deposited film controlled in band gap on a substrate existing in the film forming space.
申请公布号 EP0229518(A3) 申请公布日期 1988.04.06
申请号 EP19860309996 申请日期 1986.12.22
申请人 CANON KABUSHIKI KAISHA 发明人 SAITOH,KEISHI;HIROOKA, MASAAKI;HANNA, JUN-ICHI;SHIMIZU, ISAMU
分类号 H01L31/04;C23C16/24;C23C16/30;C23C16/44;C23C16/452;C23C16/48;G03G5/08;H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L31/04
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