| 摘要 |
PURPOSE:To prevent a creeping to a light-receiving section of charges by burying an impurity layer having the same type as a semiconductor substrate into an element isolation region in an impurity layer having a type reverse to the substrate formed to a surface section in the substrate. CONSTITUTION:N-type impurities 102 are buried to sections corresponding to element isolation regions in the surface of an N-type silicon substrate 101. An epitaxial layer 103 containing a P-type impurity is shaped onto the substrate 101, and the N-type impurities 102 are diffused into the layer 103 through heat treatment. A light-receiving region 104 and a charge leading-out region 105 are formed into the layer 103 surrounded by the N-type impurity 102 layers by an N-type impurity, and a gate insulating film 106 is shaped onto the layer 103, a gate electrode 107 onto the gate insulating film 106 and a leading-out wiring 108 onto the region 105. Adjacent light-receiving elements are element isolated by an silicon dioxide film 109, and the N-type impurity 102 is buried under the film 109. Accordingly, charges intending to creep to adjacent another light-receiving element are discharged to the substrate side through the buried impurity layer having the same type as the substrate, thus preventing a creeping to other light-receiving sections. |
