OPTICAL SEMICONDUCTOR DEVICE

摘要

PURPOSE:To efficiently pour carriers to the entire thickness of a film and to substantially improve the performance of an optical switch by pouring carriers on the surface of a thin film covering a semiconductor with a multiquantum well MQW structure in the direction in parallel with the surface. CONSTITUTION:The optical wave guide 1 of the optical switch is constituted of the multiquantum well MQW. Carriers are poured in the refraction factor changing area 7 of a wave guide intersection part in parallel with the surface of the layer through a triangular p-electrode 3 and an n-electrode 4. For carrier pouring, Be and Si are burried in a rectangular area including the wave guide 1 and a substrate 2 to form a p-area 5 and an n-area 6. If carriers are poured along the surface of the multilayer with the quantum well structure and in the direction parallel with said surface, they can be efficiently poured on the entire layer. Since a refraction factor can be varied uniformly in the direction of the thickness of the layer, the performance of the optical switch can be improved substantially.