| 摘要 |
PURPOSE:To reduce the sensitivity of the long-wavelength light which generates a carrier at a deep part of a substrate by a method wherein a picture element is isolated in such a way that a vertical-type static induction transistor (SIT) constituting each picture element is surrounded by an n<+> isolation region and, additionally, an n-channel static induction transistor is formed on a p-type substrate. CONSTITUTION:An n<+> buried layer 2 is formed on a p-type semiconductor substrate 1 in such a way that this layer functions as a drain or a source of a static induction transistor and is also used commonly for all the static induction transistors. In addition, an n<-> type epitaxial layer 6 of high resistance is formed on this layer 2, and a p<+> gate region 4 is formed on the surface of this layer 6 in such a way that this region is deeper than an n<+> region 5. In addition, each static induction transistor which constitutes one picture element is isolated by an n<+> isolation region 3. The n<+> isolation region 3 is connected to the n<+> buried layer 2, and at a part of this region 3 an electrode 3'' is formed by using Al. Through this constitution, it is possible to reduce the sensitivity of the long-wavelength light which penetrates into a deep part of the substrate and generates a carrier and to relatively increase the sensitivity of the short- wavelength light. |
