| 摘要 |
<p>PURPOSE:To decrease flickering without decreasing a contrast ratio even at a high temp. by disposing the same conductive film as the conductive film in the channel part of a thin film transistor (TFT) on or below scanning lines of the preceding stage via a gate insulating film and connecting the conductive film to picture element electrodes. CONSTITUTION:The thin film 2 of polysilicon or amorphous silicon is deposited and patterned on an insulating substrate 1. The thin film acts as the channel part, source and drain electrodes and electrodes for creating the capacity thereof of the TFT. The gate insulating film 3 is then formed and the scanning line 4 in common use as the gate electrodes are formed thereon. An inter-layer insulating film 5 is deposited thereon and contact holes are opened thereto. Another substrate having a common electrodes is opposed via several mum space to the substrate formed with the picture element electrodes 6 and data lines 7. A liquid crystal is sealed into said space to obtain an active matrix panel. The contrast ratio is thereby increased and the flickering is decreased. The image screen having good reproducibility in a wide temp. range is thus obtd.</p> |
