| 摘要 |
PURPOSE:To enhance the stability of a semiconductor memory by providing read-out and write gates which extend from the capacitor electrode of a dummy cell of a dynamic memory and employing the dummy cell in which bonding capacity is not provided. CONSTITUTION:The surface of a P type silicon substrate 41 is oxidized at the first gate to form a gate oxidized film 47, the first polysilicon layer 48 is bonded as a gate electrode 48 of the capacitor of a dummy cell. A CVD oxidized film 49 is covered, and oxidizied to form the second gate oxidized film 50 and a thermally oxidized film 51. The second polysilicon layer is covered, read out to form a read-out gate 52 and a write gate 53. Phosphorus is diffused in the substrate 41 as a data line 54 and a write line 55. The portion which depends upon a writing voltage is eliminated from the capacity of the dummy cell, and the prescribed dummy cell capacity can be always proved to the voltage. |
