| 发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH A DOUBLE LAYER - CONSISTING OF POLY SI AND A SILICIDE - PRESENT ON A LAYER OF SILICON OXIDE IS ETCHED IN A PLASMA |
| 摘要 |
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| 申请公布号 |
EP0195477(A3) |
申请公布日期 |
1988.03.30 |
| 申请号 |
EP19860200378 |
申请日期 |
1986.03.10 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
VAN ROOSMALEN, ALFRED JAN;VAN ARENDONK, ANTON PETRUS MARIA |
| 分类号 |
H01L29/78;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/306 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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