| 摘要 |
PURPOSE:To largely reduce the area occupying rate of a memory transfer register by forming the register of a plurality of trench structures in a frame interline transfer (FIT) type CCD image sensor. CONSTITUTION:An FET type CCD image sensor is composed of a matrixlike photodetector 11, a vertical transfer register 13 of a trench structure provided through a transfer gate 12, an overflow drain 15 formed through an overflow control gate 14, a horizontal transfer register 17 for reading a signal charge and a memory transfer register 16. In the image sensor of such a structure, the register 16 provided between the register 13 and the register 17 is composed of a plurality of groove digging (trench structure) structure. Thus, the area occupying rate of the memory transfer register can be largely reduced. |
