Auxiliary word line driver for effectively controlling programmability of fusible links

摘要

The problem of the distributed voltage drop along a resistive word line through which fusible elements of a circuit array are selectively programmed to a state of high resistance (effective open circuit) is circumvented by incorporated an auxiliary word line driver as part of the array. The auxiliary word line driver is coupled to the word line at a location apart from the main word line driver, so as to reduce the effective resistance and consequential voltage drop along the word line. As a result, for each memory cell along a respective word line there is sufficient "rupturing current" capability, whereby each fusible element of the memory array may be successfully programmed regardless of its physical location within the array.