| 摘要 |
PURPOSE:To obtain an enzyme sensor with a high response speed excellent in the sensitivity, by providing an enzyme immobilize film 3-20mum thick on an ion sensitive film of an ion sensitive (IS) FET. CONSTITUTION:An insulating material 4 is placed on a P-type silicon substrate 1 and scraped off thin at a portion thereof 4 on a gate 5. An ion sensitive film 2 is deposited on the insulating material 4 by the reaction sputtering and then an enzyme immobilized film 3 with the thickness of 3-20mu is provided on the sensitive film 2 by the lift off using a photoresist. Thus, the gate 5 and the sensitive film 2 are connected through the insulation material 4 scraped off thin to allow the transmission of an interface potential of the sensitive film 2 to the gate 5. Furthermore, the immobilized film 3 with the thickness of about 3-20mum is provided on the sensitive film 2 and at a position separated from the gate 5, thereby enabling the production of an enzyme sensor excellent in the response speed with a high sensitivity. |
