| 摘要 |
<p>PURPOSE: A method for correcting a defect of a phase shift mask is provided to control difference of a pattern line width in an exposure process by forming a correcting film of a position and size variable slit shape. CONSTITUTION: A method for correcting a defect of a phase shift mask comprises the following steps: a step for forming a phase shift film on a transparent mask substrate(100); a step for patterning the phase shift film; a step for grasping a position of a white defect generated in the phase shift film; a step for forming a reference correcting film pattern(141) in a central part of the white defect part; and a step for forming a sub correcting film pattern(142) in both sides of the reference correcting film pattern of the white defect part.</p> |
