发明名称 |
MONOCRYSTALLINE THREE-DIMENSIONAL INTEGRATED CIRCUIT |
摘要 |
A single-crystal monolith containing a 3-D doping pattern forming varied devices and circuits that are junction-isolated. The semiconductor monolith includes interconnecting signal paths and power buses, also junction-isolated, usually with N+ regions within P matrix regions, and tunnel junctions, N+ - P+ junctions, as ohmic contacts from N-type to P-type regions. An isolating box incorporates an orthogonal isolator. The 3-D structure places layers of critical profile normal to the growth axis. The orthogonal isolator can include floating elements. The 3-D semiconductor monolith can be manufactured through continuous or quasicontinuous processing in a closed system, such as through MBE or sputter epitaxy. Also, a thin layer of silicide can be provided as an ohmic contact and/or a thick layer of silicide can be provided as a conductor thereby providing monocrystalline 3-D devices or integrated circuits. Finally, an insulator can be provided about an entire device for isolation. |
申请公布号 |
WO8801829(A2) |
申请公布日期 |
1988.03.24 |
申请号 |
WO1987US01095 |
申请日期 |
1987.05.08 |
申请人 |
REGENTS OF THE UNIVERSITY OF MINNESOTA |
发明人 |
WARNER, RAYMOND, M., JR.;SCHRIMPF, RONALD, D.;TUSZYNSKI, ALFONS |
分类号 |
H01L21/74;H01L21/76;H01L21/761;H01L21/822;H01L27/06;H01L29/808 |
主分类号 |
H01L21/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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