| 摘要 |
Indicia are formed in a sapphire substrate by ion implantation with a sufficient amount of silicon ions to establish a contrast with the remainder of the substrate. The implant is annealed at 1050 DEG to 1200 DEG C. under an oxygen or inert atmosphere. The implants are stable to repeated heatings to elevated temperature. The implants are further beneficial in that they do not introduce a source of contamination into the substrate.
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