| 摘要 |
A semiconductor photoelectric converting device for use in a solid state image sensor includes an insulating substrate, an n- epitaxial layer formed on the substrate, n+ source and drain regions formed by diffusing n type impurities into the surface of the epitaxial layer, a p+ gate region formed by diffusing p type impurities into the surface of epitaxial layer between the source and drain regions, and an n- channel region formed between the source and drain regions. Photocarriers induced in the channel region are stored in the gate region and a source-drain current having an amplitude corresponding to an amount of stored photocarriers flows through the channel region in parallel with the surface of the epitaxial layer. Thus the photoelectric converting device is formed by a lateral type static induction transistor.
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