METHOD OF MANUFACTURING A MATRIX INFRA-RED DETECTOR WITH FRONT SIDE ILLUMINATION

摘要

A parallelepipedic detection wafer of type p made of Hg Cd Te is taken, islets or raised zones are formed from the front face and their structure is rounded, zones of type n are diffused from the front face, in order to form junctions, metallic contact terminals are formed from the front face up to the bottom level of the raised zones, the detection wafer is thinned from the rear face, the terminals are isolated, the pieces of raised zones are attached by the rear face on a processing wafer and the terminals are welded on metallization zones of the processing wafer. The invention enables an infrared detector for camera to be manufactured.