| 摘要 |
PROBLEM TO BE SOLVED: To improve the throughput by the shrinkage of the cleaning time and to reduce the contamination of heavy metal. SOLUTION: In a plasma CVD device having an upper electrode 7, a susceptor 8 and a cylindrical electrode 3, the susceptor 8 is composed so as to be freely approached and separated to and from the upper electrode 7. At the time of cleaning, a stage in which, in a state in which the susceptor 8 is separated from the upper electrode 7, high frequency electric power is applied to the cylindrical electrode 3 to generate magnetron discharge type plasma in a reaction chamber, and the inside of the reaction chamber is cleaned and a stage in which, in a state in which the susceptor 8 is approached to the upper electrode 7, high frequency electric power is applied to the upper electrode 7 to generate capacity coupling type plasma in the reaction chamber, and the inside of the reaction chamber is cleaned are almost simultaneously executed.
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