发明名称 Semiconductor memory with improved write function.
摘要 A static memory which can operate with a small power consumption and produces the same data written into a selected memory cell, is disclosed. The memory comprises a memory array (609), a sense amplifier (903), a latch circuit (610') for holding data from the sense amplifier and a data-in buffer (603) for generating a buffered input signal (D'IN) and is featured by a circuit for directly writting the buffered input signal to the latch circuit in a write mode.
申请公布号 EP0259862(A1) 申请公布日期 1988.03.16
申请号 EP19870113195 申请日期 1987.09.09
申请人 NEC CORPORATION 发明人 KOBAYASHI, YASUO C/O NEC CORPORATION
分类号 G11C11/417;G11C7/10;G11C7/22;G11C11/401;G11C11/41;G11C11/419;(IPC1-7):G11C7/00;G11C11/34 主分类号 G11C11/417
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