发明名称 |
Semiconductor memory with improved write function. |
摘要 |
A static memory which can operate with a small power consumption and produces the same data written into a selected memory cell, is disclosed. The memory comprises a memory array (609), a sense amplifier (903), a latch circuit (610') for holding data from the sense amplifier and a data-in buffer (603) for generating a buffered input signal (D'IN) and is featured by a circuit for directly writting the buffered input signal to the latch circuit in a write mode.
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申请公布号 |
EP0259862(A1) |
申请公布日期 |
1988.03.16 |
申请号 |
EP19870113195 |
申请日期 |
1987.09.09 |
申请人 |
NEC CORPORATION |
发明人 |
KOBAYASHI, YASUO C/O NEC CORPORATION |
分类号 |
G11C11/417;G11C7/10;G11C7/22;G11C11/401;G11C11/41;G11C11/419;(IPC1-7):G11C7/00;G11C11/34 |
主分类号 |
G11C11/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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