发明名称 |
THE PROCESS FOR MANUFACTURING POLY-CRISTAL SILICON SEMICONDUCTOR CHIP |
摘要 |
The method comprises (1) the first step for controlling the resistance in the poly silicon for electrode wiring by ion injection and (2) the second step for the slope-etching in the poly silicon by means of isotropic etching under the controlled resistance. The method reduced step differences in the curves produced in the process of continuous oxidation made after etching.
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申请公布号 |
KR880000275(B1) |
申请公布日期 |
1988.03.15 |
申请号 |
KR19850005345 |
申请日期 |
1985.07.25 |
申请人 |
SAMSUNG SEMICONDUCTOR & COMMUNICATION CO.,LTD. |
发明人 |
LEE, JUNG-GYU |
分类号 |
H01L21/302;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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