| 摘要 |
PURPOSE:To enhance amorphous formability and to stably maintain recording information by forming a recording layer, the atomic compsn. of which is expressed by the prescribed formula and constituting the atomic % of the element selected from specific elements and Sb within a prescribed range. CONSTITUTION:Protective layers 2, 4, 5 with the recording layer 3 in-between are formed on a substrate 1 to prevent the splashing of the recording layer by beam irradiation. The recording layer is expressed by the prescribed general formula; wherein the atomic % (x) of Sb in In and Sn is specified to 40-80%; the alloy of >=1 kinds selected from Ar, Kr, Xe, Rn, Na, K, Rb, Cs, Ca, Sr, Ba, La, Eu, Yb, Fr, Ra, and Ac is designated as M and the atomic % of (y) of M in the In100-xSbx alloy and M is specified to 0-30%. Since the element M is extremely smaller in atomic radius than In and Sb, the alloy having such compsn. has the high amorphous formability and is capable of stably forming recording pits. |
