Electronic device including a thin film transistor

摘要

Short channel thin film transistors suffer from unacceptably high leakage currents. The invention provides an electronic device including a thin film transistor in which the length (20) of the channel of the transistor is 1 mum or less, and the mobility of the semiconductor material in the channel is less than 0.2 cm2/Vs. The selection of a low mobility semiconductor material results in acceptable off-current characteristics and its effect on the switching speed of the device is compensated for by the short channel length (20) of the device.