发明名称 |
Self-aligned SiGe HBT on a SOI substrate |
摘要 |
A SiGe HBT BiCMOS on a SOI substrate includes a self-aligned base/emitter junction to optimize the speed of the HBT device. The disclosed SiGe BiCMOS/SOI device has a higher performance than a SiGe BiCMOS device on a bulk substrate. The disclosed device and method of fabricating the same also retains the high performance of a SiGe HBT and the low power, high-speed properties of a SOI CMOS. In addition, the disclosed method of fabricating a self-aligned base/emitter junction provides a HBT transistor having an improved frequency response.
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申请公布号 |
US6806554(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20030413257 |
申请日期 |
2003.04.14 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
HSU SHENG TENG |
分类号 |
H01L21/331;H01L21/84;H01L27/12;H01L29/737;(IPC1-7):H01L27/082;H01L27/102;H01L29/70;H01L31/11 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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