| 摘要 |
PURPOSE:To obtain a laminated semiconductor device which can be composed in a simple process for a complementary MOS integrated circuit by independently forming an n-type semiconductor element in a first layer and a p-type semiconductor element in a second layer, and newly providing a layer of metal connections between the first layer and the second layer. CONSTITUTION:A metal connection layer 4 is formed through a first insulating layer 3 on an n-type semiconductor integrated circuit layer 1a, and a p-type semiconductor integrated circuit layer 2a is formed through 4 second insulating layer 5 thereon. Interlayer connections 6 which arrive from the layer 2a at the layer 4 and the layer 2a are provided. For example, the layer 1a is first formed, and the layer 3 is then formed. Then, metal connections of two layers are formed, and the layer 5 is again formed. Then, a single crystal silicon layer is formed on the layer 5, and the layer 2a is formed here. Then, a contact hole which arrives from the layer 2a at the layer 1a is opened, and interlayer connections 6, 6a-6c are formed. At this time, they are contacted with metal connections 4a-4c by the holes as required. |
