| 摘要 |
An arrangement for protecting an electrical circuit from a voltage transient having a fast rise time, e.g. in the order of 20 Vns<-><1> comprises a number of semiconductive threshold foldback switching elements preferably formed from a chalcogenide glass, in parallel with one another between the current carrying line of the circuit and earth. An additional, nonlinear, circuit protection device is connected in parallel with the switching element between the current carrying line and earth, in order to pass high frequency components of the transient to earth.
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