| 发明名称 |
Non-single-crystal semiconductor light emitting device |
| 摘要 |
A non-single crystal semiconductor light emitting device comprising a non-single crystal semiconductor region formed by a non-single crystal semiconductor laminate member made up of a plurality m (where m>/=3) of non-single-crystal semiconductor layers M1, M2, . . . and Mm sequentially laminate in this order. The thickness of each M1, M2 . . . Mm is 100 ANGSTROM or less.
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| 申请公布号 |
US4730207(A) |
申请公布日期 |
1988.03.08 |
| 申请号 |
US19860842950 |
申请日期 |
1986.03.24 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
| 分类号 |
H01L21/205;H01L33/06;H01L33/10;H01L33/16;H01L33/34;H01L33/38;H01L33/42;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/205 |
| 代理机构 |
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